Factory Lead Time  

5 Weeks

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

171W Tc

Turn Off Delay Time  

70 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

6.3A Tc

Series  

QFET®

Published  

2013

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

900V

Peak Reflow Temperature (Cel)  

260

Current Rating  

6.3A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

171W

Turn On Delay Time  

40 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.9 Ω @ 3.15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2080pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

45nC @ 10V

Rise Time  

110ns

Vgs (Max)  

±30V

Fall Time (Typ)  

70 ns

Continuous Drain Current (ID)  

6.3A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

900V

Pulsed Drain Current-Max (IDM)  

25A

Avalanche Energy Rating (Eas)  

850 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free